Title: Strontium Titanate
CAS Registry Number: 12060-59-2
CAS Name: Strontium titanium oxide (SrTiO3)
Molecular Formula: O3SrTi
Molecular Weight: 183.49
Percent Composition: O 26.16%, Sr 47.75%, Ti 26.09%
Line Formula: SrTiO3
Literature References: Dielectric and photoelectric material. Occurs in nature as the mineral tausonite. Optical properties: H. A. Weakliem et al., RCA Rev. 36, 149 (1975). Electrical conductivity: U. Balachandran, N. G. Eror, J. Solid State Chem. 39, 351 (1981). Dielectric properties of glass-ceramics: S. L. Swartz, A. S. Bhalla, Ferroelectrics 87, 141 (1988). Review of growth and properties of single crystals: K. Nassau, A. E. Miller, J. Cryst. Growth 91, 373-381 (1988). Prepn by sol-gel method: J. Moreno et al., J. Mater. Chem. 5, 509 (1995); by solution-precipitation method: V. Kumar, J. Am. Ceram. Soc. 82, 2580 (1999). Prepn of thin films by ECR plasma sputtering: S. Miyake et al., Surface Coatings Technol. 169-170, 27 (2003); by spray pyrolysis: G. Brankovic et al., J. Eur. Ceram. Soc. 24, 989 (2004). Piezoelectric response at cryogenic temperatures: D. E. Grupp, A. M. Goldman, Science 276, 392 (1997). IR characterization of thin films: B. G. Almeida et al., Appl. Surface Sci. 238, 395 (2004). Room-temperature ferroelectricity: J. H. Haeni et al., Nature 430, 758 (2004).
Properties: d 5.12. nD 2.409. Hardness 5½ on Moh's scale. Specific heat: ~10 J s-1 K-1 m-1. Thermal conductivity: ~52 mW cm-1 K-1.
Index of refraction: nD 2.409
Density: d 5.12
Use: In electronics and electrochemical insulation; in photocatalysis; sputtering target for thin film capacitors; substrate for epitaxial growth of high temperature superconductor thin films. Diamond simulant gemstone. |