Title: Indium Nitride
CAS Registry Number: 25617-98-5
Additional Names: Indium mononitride
Molecular Formula: InN
Molecular Weight: 128.82
Percent Composition: In 89.13%, N 10.87%
Literature References: Semiconductor material. Prepn and structure determn: R. Juza, H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938). Low-temperature organometallic chemical vapor deposition: R. A. Fischer et al., Chem. Mater. 8, 1356 (1996). Prepn and characterization of nanocrystalline forms: J. Xiao et al., Inorg. Chem. 42, 107 (2003). Physical properties of films: G. V. Samsonov, A. F. Andreeva, Sci. Sintering 12, 155 (1980). Thermal properties: S. Krukowski et al., J. Phys. Chem. Solids 59, 289 (1998). Optical and electronic properties: V. V. Sobolev, M. A. Zlobina, Semiconductors 33, 385 (1999).
Properties: Usually crystallizes as a hexagonal wurtzite lattice. Tdec 427-550°. mp ~1900°. Bandgap = 1.89 eV. n (4.80 eV) = 2.78. d 6.78±0.05.
Melting point: mp ~1900°
Index of refraction: n (4.80 eV) = 2.78
Density: d 6.78±0.05
Use: In manuf of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells. |