Title: Indium Phosphide
CAS Registry Number: 22398-80-7
Molecular Formula: InP
Molecular Weight: 145.79
Percent Composition: In 78.76%, P 21.25%
Literature References: Prepd from white phosphorus and indium iodide at 400°: Thiel, Koelsch, Z. Anorg. Chem. 66, 319 (1910); from phosphorus vapor and heated indium metal: Jandelli, Gazz. Chim. Ital. 71, 58 (1941). Synthesis in zone melting furnace at 1010° from a non-stoichiometric melt: Minden, Sylvania Technol. 11, no. 1, 18 (Jan. 1958).
Properties: Brittle mass with metallic appearance, not easily attacked by mineral acids. mp 1070°. Dielectric constant: 10.8. Energy gap: 1.3 ev at 25°. Electron mobility: approx 4600 cm2/volt-sec. Hole mobility: approx 150 cm2/volt-sec. Solid solns of InP can cover the energy gap continuously from 0.3 to 1.3 ev. Rectification has been observed in InP although it is more characteristic of a Schottky type barrier than the minority carrier injection phenomenon observed in germanium.
Melting point: mp 1070°
Use: In electronics for research on semiconductors. |