Title: Indium Gallium Aluminum Phosphide
CAS Registry Number: 108424-49-3; 108730-13-8
Additional Names: InGaAlP
Literature References: Crystal lattice matched to GaAs substrates for production of visible (670-690 nm) light lasers. Conforms to the general formula In0.5(Ga(1-x)Alx)0.5P. Prepn by molecular beam epitaxy: H. Asahi et al., J. Appl. Phys. 53, 4928 (1982); M. J. Hafich et al., J. Vac. Sci. Technol. B 10, 969 (1992). Refractive indices: H. Tanaka et al., J. Appl. Phys. 59, 985 (1986). Photoluminescence studies: S. Naritsuka et al., J. Electron. Mater. 20, 687 (1991). Schottky barrier energy: A. Nanda et al., Appl. Phys. Lett. 61, 81 (1992). Thermal analysis: G. Hatakoshi et al., Trans. Inst. Electron. Inf. Commun. Eng. E71, 315 (1988); K. Itaya et al., IEEE J. Quantum Electron. 29, 2068 (1993). Use in lasers: G. Hatakoshi et al., Jpn. J. Appl. Phys. 31, 501 (1992); J. Rennie et al., IEEE J. Quantum Electron. 29, 1857 (1993).
Use: Laser diode arrays for high-density optical systems and information processing systems such as barcode readers. |