Title: Indium Arsenide
CAS Registry Number: 1303-11-3
Molecular Formula: AsIn
Molecular Weight: 189.74
Percent Composition: As 39.49%, In 60.51%
Line Formula: InAs
Literature References: Prepd by fusion of the elements in an evacuated, sealed tube: Gans et al., Compt. Rend. 237, 310 (1953); Talley, Enright, Phys. Rev. 94, 1931 (1954); Harmon et al., ibid. 104, 1562 (1956); Minden, Sylvania Technol. 11, no. 1, 17 (Jan. 1958).
Properties: Metallic appearance. Small single crystals have been grown by a modification of the Czochralski technique: Gremmelmaier, Z. Naturforsch. 11A, 463 (1956). mp 943°. Hardly attacked by mineral acids. Energy gap: 0.35 ev. Electron mobility: approx 33,000 cm2/volt-sec. Hole mobility: 460 cm2/volt-sec. Dielectric constant 11.7.
Melting point: mp 943°
Use: In semiconductor electronics. |